maximum ratings: (t a =25c ) symbol units power dissipation p d 200 mw operating and storage temperature t j , t stg -65 to +150 c thermal reistance ja 625 c/w electrical characteristics per diode: (t a =25c) v f =0.9v max @ i f =10ma for all types. cmkz5221b thru cmkz5261b surface mount ultramini? triple isolated silicon zener diode 5% tolerance sot-363 case central semiconductor corp. tm r0 (6-october 2004) description: the central semiconductor cmkz5221b series contains three (3) isolated silicon zener diodes packaged in an ultramini? sot-363 surface mount case, designed for use in industrial, commercial, entertainment and computer applications. higher voltage devices are available on special order. marking code: see marking codes on electrical characteristics table type zener voltage v z @ i zt test current maximum zener impedance maximum reverse current max. temp. coeff. mark. code min nom max i zt z zt @ i zt z zt @ i zk i r @ v r v z volts volts volts ma ? ? ? ? ma a volts % /c cmkz5221b 2.280 2.4 2.520 20 30 1200 0.25 100 1.0 -0.085 8a1t cmkz5222b 2.375 2.5 2.625 20 30 1250 0.25 100 1.0 -0.085 8b1t cmkz5223b 2.565 2.7 2.835 20 30 1300 0.25 75 1.0 -0.080 8c1t cmkz5224b 2.660 2.8 2.940 20 30 1400 0.25 75 1.0 -0.080 8d1t cmkz5225b 2.850 3.0 3.150 20 29 1600 0.25 50 1.0 -0.075 8e1t cmkz5226b 3.135 3.3 3.465 20 28 1600 0.25 25 1.0 -0.070 8act cmkz5227b 3.420 3.6 3.780 20 24 1700 0.25 15 1.0 -0.065 8bct cmkz5228b 3.705 3.9 4.095 20 23 1900 0.25 10 1.0 -0.060 8cct cmkz5229b 4.085 4.3 4.515 20 22 2000 0.25 5.0 1.0 0.055 8dct cmkz5230b 4.465 4.7 4.935 20 19 1900 0.25 5.0 2.0 0.030 8ect cmkz5231b 4.845 5.1 5.335 20 17 1600 0.25 5.0 2.0 0.030 8fct cmkz5232b 5.320 5.6 5.880 20 11 1600 0.25 5.0 3.0 +0.038 8gct cmkz5233b 5.700 6.0 6.300 20 7.0 1600 0.25 5.0 3.5 +0.038 8hct cmkz5234b 5.890 6.2 6.510 20 7.0 1000 0.25 3.0 4.0 +0.045 8jct cmkz5235b 6.460 6.8 7.140 20 5.0 750 0.25 3.0 5.0 +0.050 8kct cmkz5236b 7.125 7.5 7.875 20 6.0 500 0.25 3.0 6.0 +0.058 8lct cmkz5237b 7.790 8.2 8.610 20 8.0 500 0.25 3.0 6.5 +0.062 8mct cmkz5238b 8.265 8.7 9.135 20 8.0 600 0.25 3.0 6.5 +0.065 8nct cmkz5239b 8.645 9.1 9.555 20 10 600 0.25 3.0 7.0 +0.068 8pct
central semiconductor corp. tm cmkz5221b thru cmkz5261b surface mount ultramini? triple isolated silicon zener diode 5% tolerance r0 (6-october 2004) sot-363 case - mechanical outline electrical characteristics per diode: (t a =25c) v f =0.9v max @ i f =10ma for all types. type zener voltage v z @ i zt test current maximum zener impedance maximum reverse current max. temp. coeff. mark. code min nom max i zt z zt @ i zt z zt @ i zk i r @ v r v z volts volts volts ma ? ? ? ? ma a volts % /c cmkz5240b 9.500 10 10.50 20 17 600 0.25 3.0 8.0 +0.075 8qct cmkz5241b 10.45 11 11.55 20 22 600 0.25 2.0 8.4 +0.076 8rct cmkz5242b 11.40 12 12.60 20 30 600 0.25 1.0 9.1 +0.077 8sct cmkz5243b 12.35 13 13.65 9.5 13 600 0.25 0.5 9.9 +0.079 8tct cmkz5244b 13.30 14 14.70 9.0 15 600 0.25 0.1 10 +0.082 8uct cmkz5245b 14.25 15 15.75 8.5 16 600 0.25 0.1 11 +0.082 8vct cmkz5246b 15.20 16 16.80 7.8 17 600 0.25 0.1 12 +0.083 8wct cmkz5247b 16.15 17 17.85 7.4 19 600 0.25 0.1 13 +0.084 8xct cmkz5248b 17.10 18 18.90 7.0 21 600 0.25 0.1 14 +0.085 8yct cmkz5249b 18.05 19 19.95 6.6 23 600 0.25 0.1 14 +0.086 8zct cmkz5250b 19.00 20 21.00 6.2 25 600 0.25 0.1 15 +0.086 1a8t cmkz5251b 20.90 22 23.10 5.6 29 600 0.25 0.1 17 +0.087 1b8t cmkz5252b 22.80 24 25.20 5.2 33 600 0.25 0.1 18 +0.088 1c8t cmkz5253b 23.75 25 26.25 5.0 35 600 0.25 0.1 19 +0.089 1d8t CMKZ5254B 25.65 27 28.35 4.6 41 600 0.25 0.1 21 +0.090 1e8t cmkz5255b 26.60 28 29.40 4.5 44 600 0.25 0.1 21 +0.091 1f8t cmkz5256b 28.50 30 31.60 4.2 49 600 0.25 0.1 23 +0.091 1g8t cmkz5257b 31.35 33 34.65 3.8 58 700 0.25 0.1 25 +0.092 1h8t cmkz5258b 34.20 36 37.80 3.4 70 700 0.25 0.1 27 +0.093 1j8t cmkz5259b 37.05 39 40.95 3.2 80 800 0.25 0.1 30 +0.094 1k8t cmkz5260b 40.85 43 45.15 3.0 93 900 0.25 0.1 33 +0.095 1l8t cmkz5261b 44.65 47 49.35 2.7 105 1000 0.25 0.1 36 +0.095 1m8t lead code 1) anode d1 2) anode d2 3) anode d3 4) cathode d3 5) cathode d2 6) cathode d1
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